NDF05N50ZH

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

FET Type :

N-Channel

Vgs (Max) :

±30V

Case Connection :

Isolated

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

RoHS Status :

RoHS Compliant

Surface Mount :

No

Rise Time :

15ns

Package / Case :

TO-220-3 Full Pack

Published :

2010

Fall Time (Typ) :

14 ns

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

5.5A

Mounting Type :

Through Hole

Power Dissipation-Max :

30W Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Number of Pins :

3

Factory Lead Time :

5 Weeks

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Turn-Off Delay Time :

24 ns

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

30W

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pbfree Code :

yes

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 25V