NDF04N60ZG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

13 ns

Continuous Drain Current (ID) :

4.8A

Power Dissipation-Max :

30W Tc

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Surface Mount :

No

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Length :

10.63mm

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Power Dissipation :

28W

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Rise Time :

9ns

Transistor Element Material :

SILICON

Height :

16.12mm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Resistance :

2Ohm

Pin Count :

3

ECCN Code :

EAR99

Factory Lead Time :

29 Weeks

Case Connection :

Isolated

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

3A

Number of Pins :

3

Number of Elements :

1

Mounting Type :

Through Hole

Published :

2010

Terminal Finish :

Tin (Sn)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Fall Time (Typ) :

15 ns

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Width :

4.9mm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Radiation Hardening :

No

Number of Terminations :

3

Turn-Off Delay Time :

24 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)