NDF05N50ZH
- Mfr.Part #
- NDF05N50ZH
- Manufacturer
- Sanyo
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5.5A TO220-3
- Stock
- 38,342
- In Stock :
- 38,342
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 5.5A
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 24 ns
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- Rise Time :
- 15ns
- Pin Count :
- 3
- Factory Lead Time :
- 5 Weeks
- Turn On Delay Time :
- 11 ns
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 20A
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 632pF @ 25V
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 30W
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 30W Tc
- Fall Time (Typ) :
- 14 ns
- Case Connection :
- Isolated
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Published :
- 2010
- Surface Mount :
- No
- Number of Elements :
- 1
- Datasheets
- NDF05N50ZH

N-Channel Tube 1.5 Ω @ 2.2A, 10V ±30V 632pF @ 25V 28nC @ 10V TO-220-3 Full Pack
NDF05N50ZH Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 632pF @ 25V.This device has a continuous drain current (ID) of [5.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 24 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
NDF05N50ZH Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 20A.
NDF05N50ZH Applications
There are a lot of ON Semiconductor
NDF05N50ZH applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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