NDF02N60ZG

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1A, 10V

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Turn On Delay Time :

9 ns

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Continuous Drain Current (ID) :

2.4A

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 10V

Published :

2010

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Height :

16.12mm

Turn-Off Delay Time :

15 ns

Number of Pins :

3

Rise Time :

7ns

Pin Count :

3

Case Connection :

Isolated

Fall Time (Typ) :

7 ns

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 25V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Weight :

4.535924g

Element Configuration :

Single

Power Dissipation :

24W

Lead Free :

Lead Free

Number of Elements :

1

Width :

4.9mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Length :

10.63mm

Power Dissipation-Max :

24W Tc

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

RoHS Status :

RoHS Compliant