NDF0610
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- Mfr.Part #
- NDF0610
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 5,412
- In Stock ：
- 5,412
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 180mA
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.43nC @ 10V
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Contains Lead
- Current Rating :
- -180mA
- Voltage - Rated DC :
- -50V
- Packaging :
- Bulk
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 180mA Ta
- Datasheets
- NDF0610
P-Channel Bulk 10 Ω @ 500mA, 10V 60pF @ 25V 1.43nC @ 10V 60V TO-226-3, TO-92-3 (TO-226AA)
NDF0610 Description
This high cell density, DMOS P-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. The on-state resistance of this extremely high density technology has been reduced, and it offers durable, dependable performance and quick switching. They can deliver pulsed currents up to 1A and may be employed with little effort in the majority of applications requiring up to 180mA DC. This product is best suited for low voltage applications that need a high side switch with a low current.
NDF0610 Features
-
-0.18 and -0.12A, -60V. RDS(ON) = 10W
-
Voltage controlled p-channel small signal switch
-
High density cell design for low RDS(ON)
-
TO-92 and SOT-23 packages for both through hole and surface mount applications
-
High saturation current
NDF0610 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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