MS1337

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Finish :

TIN LEAD

Number of Elements :

1

Max Power Dissipation :

70W

Radiation Hardening :

No

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Polarity/Channel Type :

NPN

Collector-Base Capacitance-Max :

120pF

Published :

2002

Pin Count :

4

Configuration :

Single

Collector Emitter Breakdown Voltage :

18V

Transistor Type :

NPN

Number of Terminations :

4

JESD-609 Code :

e0

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 250mA 5V

Collector Emitter Voltage (VCEO) :

18V

Operating Temperature :

200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Package / Case :

M113

Transistor Application :

AMPLIFIER

Max Collector Current :

8A

Terminal Position :

Radial

Collector Base Voltage (VCBO) :

36V

Gain :

10dB

Frequency - Transition :

175MHz

Number of Pins :

4

Transistor Element Material :

SILICON

Power - Max :

70W

Pbfree Code :

No

Terminal Form :

Flat

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Highest Frequency Band :

VERY HIGH FREQUENCY B

Mounting Type :

Chassis Mount