MRF586

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

17V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 5V

Power Dissipation :

1W

Lead Free :

Lead Free

Terminal Form :

Wire

Transistor Type :

NPN

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

JESD-609 Code :

e0

Number of Elements :

1

Configuration :

Single

Frequency :

3GHz

Current - Collector (Ic) (Max) :

200mA

Collector Base Voltage (VCBO) :

35V

Output Power :

1W

Gain :

13.5dB

Pin Count :

3

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

3000MHz

Collector Emitter Voltage (VCEO) :

20V

Max Collector Current :

200mA

Packaging :

Bulk

Terminal Position :

BOTTOM

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

ECCN Code :

EAR99

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Package / Case :

TO-205AD, TO-39-3 Metal Can

Number of Pins :

3

Transistor Application :

AMPLIFIER

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

3V

Max Power Dissipation :

1W

Published :

2004