MRF581AG

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Radial

Power - Max :

1.25W

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e1

Collector-Base Capacitance-Max :

3pF

Frequency - Transition :

5GHz

Transition Frequency :

5000MHz

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA 5V

Configuration :

Single

Transistor Element Material :

SILICON

Package / Case :

Macro-X

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 500MHz

Polarity/Channel Type :

NPN

RoHS Status :

RoHS Compliant

Base Part Number :

MRF581

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

15V

Number of Pins :

4

Packaging :

Bulk

Max Collector Current :

200mA

Number of Elements :

1

Number of Terminations :

4

Terminal Form :

Flat

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

30V

ECCN Code :

EAR99

Max Power Dissipation :

1.25W

Published :

2004

Transistor Application :

AMPLIFIER

Terminal Finish :

TIN SILVER COPPER

Pin Count :

4

Collector Emitter Voltage (VCEO) :

15V

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Gain :

13dB ~ 15.5dB

Mount :

Surface Mount

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)