MRF5812G

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

8

Pin Count :

8

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

15V

Max Power Dissipation :

1.25W

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

Mount :

Surface Mount

Terminal Form :

Gull wing

Transition Frequency :

5000MHz

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

Configuration :

Single

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Number of Elements :

1

Frequency - Transition :

5GHz

Max Collector Current :

200mA

Published :

2004

Transistor Element Material :

SILICON

Number of Terminations :

8

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Bulk

Mounting Type :

Surface Mount

Transistor Type :

NPN

Power - Max :

1.25W

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Collector Base Voltage (VCBO) :

30V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

15V

Collector-Base Capacitance-Max :

2pF

JESD-609 Code :

e3

Gain :

13dB ~ 15.5dB