MRF5812

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Power Dissipation :

1.25W

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

Transistor Type :

NPN

Number of Terminations :

8

Transition Frequency :

5000MHz

Transistor Application :

AMPLIFIER

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Bulk

Number of Pins :

8

Collector Emitter Voltage (VCEO) :

15V

Pbfree Code :

No

Mount :

Surface Mount

Radiation Hardening :

No

Number of Elements :

1

Collector Emitter Breakdown Voltage :

15V

Configuration :

Single

Mounting Type :

Surface Mount

Collector-Base Capacitance-Max :

2pF

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

2.5V

JESD-609 Code :

e0

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Published :

2004

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

Gain :

13dB ~ 15.5dB

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

200mA

Pin Count :

8

Current - Collector (Ic) (Max) :

200mA

Collector Base Voltage (VCBO) :

30V

Polarity/Channel Type :

NPN

Max Power Dissipation :

1.25W

Frequency :

5GHz