MPSA06T93
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- Mfr.Part #
- MPSA06T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 24,020
- In Stock ：
- 24,020
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Voltage - Rated DC :
- 80V
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Terminal Finish :
- TIN/TIN COPPER
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Base Part Number :
- STA06
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- HTS Code :
- 8541.21.00.95
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 1μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Power - Max :
- 350mW
- Pin Count :
- 3
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Current Rating :
- 500mA
- Datasheets
- MPSA06T93
,TO-226_straightlead.jpg)
NPN 150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06T93 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA06T93 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06T93 Applications
There are a lot of ROHM Semiconductor
MPSA06T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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