MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- hFE Min :
- 100
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Current Rating :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Published :
- 2002
- Max Breakdown Voltage :
- 60V
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Height :
- 4.58mm
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Width :
- 3.86mm
- Polarity/Channel Type :
- NPN
- Base Part Number :
- MPSA05
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Saturation Voltage :
- 250mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Weight :
- 201mg
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Contact Plating :
- Copper, Silver, Tin
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 625mW
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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