MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Base Part Number :
- MPSA05
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 250mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Width :
- 3.86mm
- Height :
- 4.58mm
- Number of Elements :
- 1
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Voltage - Rated DC :
- 60V
- Weight :
- 201mg
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Emitter Base Voltage (VEBO) :
- 4V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Length :
- 4.58mm
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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