MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MPSA05
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Contact Plating :
- Copper, Silver, Tin
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2002
- Voltage - Rated DC :
- 60V
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 4.58mm
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Height :
- 4.58mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Weight :
- 201mg
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Width :
- 3.86mm
- hFE Min :
- 100
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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