MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Length :
- 4.58mm
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Max Power Dissipation :
- 625mW
- Published :
- 2002
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Silver, Tin
- Frequency :
- 100MHz
- hFE Min :
- 100
- Base Part Number :
- MPSA05
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 250mV
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 4V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Width :
- 3.86mm
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Through Hole
- Height :
- 4.58mm
- Weight :
- 201mg
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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