MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.58mm
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2002
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 100
- Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 60V
- Weight :
- 201mg
- Transistor Type :
- NPN
- Width :
- 3.86mm
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Factory Lead Time :
- 15 Weeks
- Length :
- 4.58mm
- Voltage - Rated DC :
- 60V
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- MPSA05
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Mount :
- Through Hole
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 250mV
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 4V
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Current Rating :
- 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Contact Plating :
- Copper, Silver, Tin
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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