MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Number of Pins :
- 3
- Width :
- 3.86mm
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 4.58mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 250mV
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 100MHz
- Base Part Number :
- MPSA05
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Frequency :
- 100MHz
- Max Collector Current :
- 500mA
- Weight :
- 201mg
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2002
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Copper, Silver, Tin
- Length :
- 4.58mm
- Factory Lead Time :
- 15 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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