MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Single
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Published :
- 2002
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Weight :
- 201mg
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- hFE Min :
- 100
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Height :
- 4.58mm
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e1
- Frequency :
- 100MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Base Part Number :
- MPSA05
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Pins :
- 3
- Width :
- 3.86mm
- Current Rating :
- 500mA
- Length :
- 4.58mm
- Emitter Base Voltage (VEBO) :
- 4V
- Factory Lead Time :
- 15 Weeks
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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