MPSA05RLRA
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- Mfr.Part #
- MPSA05RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN SS GP 60V TO92
- Stock
- 11,657
- In Stock ：
- 11,657
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Surface Mount :
- No
- Base Part Number :
- MPSA05
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- 240
- Qualification Status :
- Not Qualified
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- 500mA
- Number of Terminations :
- 3
- Reach Compliance Code :
- not_compliant
- Collector Emitter Voltage (VCEO) :
- 250mV
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Voltage - Rated DC :
- 60V
- HTS Code :
- 8541.21.00.95
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- MPSA05RLRA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
MPSA05RLRA Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.
MPSA05RLRA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RLRA Applications
There are a lot of ON Semiconductor
MPSA05RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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