MPS5179G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

400mV

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

hFE Min :

25

Published :

2006

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA 1V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

12V

Emitter Base Voltage (VEBO) :

2.5V

Current Rating :

50mA

Pin Count :

3

Mount :

Through Hole

Collector Base Voltage (VCBO) :

20V

Gain Bandwidth Product :

2 GHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Number of Elements :

1

Min Operating Temperature :

-55°C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

3

Max Power Dissipation :

200mW

Transition Frequency :

900MHz

Mounting Type :

Through Hole

Power Dissipation :

200W

Voltage - Rated DC :

12V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Type :

NPN

Element Configuration :

Single

Max Operating Temperature :

150°C

Frequency :

2GHz

Collector Emitter Voltage (VCEO) :

12V

Max Collector Current :

50mA

Number of Terminations :

3

Polarity/Channel Type :

NPN

Base Part Number :

MPS5179