MPS5179

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

2.5V

Max Breakdown Voltage :

12V

Collector Emitter Breakdown Voltage :

12V

Element Configuration :

Single

Gain Bandwidth Product :

2 GHz

Number of Elements :

1

Number of Terminations :

3

Max Power Dissipation :

350mW

JESD-609 Code :

e0

ECCN Code :

EAR99

Mount :

Through Hole

Qualification Status :

Not Qualified

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Max Collector Current :

50mA

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Base Voltage (VCBO) :

20V

Polarity/Channel Type :

NPN

Current Rating :

50mA

Frequency :

2GHz

Pbfree Code :

No

Collector Emitter Voltage (VCEO) :

12V

Terminal Position :

BOTTOM

Power Dissipation :

350mW

Published :

2006

Continuous Collector Current :

50mA

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-55°C

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MPS5179

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

400mV

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Gain :

15 dB

Transition Frequency :

900MHz

Reach Compliance Code :

not_compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA 1V

hFE Min :

25

Power - Max :

200mW

Max Operating Temperature :

150°C

Lead Free :

Lead Free

RoHS Status :

Non-RoHS Compliant

Weight :

201mg

Voltage - Rated DC :

12V

Packaging :

Bulk

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

240