MMIX1F44N100Q3
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- Mfr.Part #
- MMIX1F44N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A 24SMPD
- Stock
- 28,593
- In Stock ：
- 28,593
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 694W (Tc)
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 1kV
- Length :
- 25.25mm
- Number of Terminations :
- 21
- FET Feature :
- --
- FET Type :
- N-Channel
- Series :
- HiPerFET™
- Package / Case :
- 24-PowerSMD, 21 Leads
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 5.7mm
- Drain-source On Resistance-Max :
- 0.245 Ω
- Packaging :
- Tube
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Mounting Style :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- RoHS :
- Details
- Published :
- 2006
- Brand :
- IXYS
- Turn On Delay Time :
- 48 ns
- Factory Lead Time :
- 30 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 30 A
- Power Dissipation-Max (Abs) :
- 694 W
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Rise Time :
- 30ns
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Pins :
- 24
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 30A
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 21
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 264nC @ 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 694W Tc
- JESD-30 Code :
- R-PDSO-G21
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 110A
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- 24-SMPD
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Mount :
- Surface Mount
- Package :
- Tube
- Fall Time (Typ) :
- 28 ns
- DS Breakdown Voltage-Min :
- 1000 V
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 66 ns
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- MMIX1F44
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 245m Ω @ 22A, 10V
- Width :
- 23.25mm
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 21
- Datasheets
- MMIX1F44N100Q3
N-Channel Tube 245m Ω @ 22A, 10V ±30V 13600pF @ 25V 264nC @ 10V 1000V 24-PowerSMD, 21 Leads
MMIX1F44N100Q3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [30 A] according to its drain current.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 110A.A turn-on delay time of 48 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
MMIX1F44N100Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 110A.
a 1000V drain to source voltage (Vdss)
MMIX1F44N100Q3 Applications
There are a lot of IXYS
MMIX1F44N100Q3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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