MMIX1F420N10T
- Mfr.Part #
- MMIX1F420N10T
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 334A 24SMPD
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Type :
- SMPD
- Base Product Number :
- MMIX1F420
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 1000 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 47 ns
- Height :
- 5.7mm
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100 V
- Package / Case :
- 24-PowerSMD, 21 Leads
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Package :
- Tube
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 334 A
- Channel Mode :
- Enhancement
- Published :
- 2012
- Width :
- 23.25mm
- Number of Elements per Chip :
- 1
- Supplier Device Package :
- 24-SMPD
- Maximum Operating Temperature :
- +175 °C
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 21
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 680W Tc
- Channel Type :
- N
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Manufacturer :
- IXYS
- FET Feature :
- --
- ECCN Code :
- EAR99
- Power Dissipation :
- 680W
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G21
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 30 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 670nC @ 10V
- Element Configuration :
- Single
- Mounting Style :
- SMD/SMT
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 334A
- Configuration :
- Single
- Length :
- 25.25mm
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 334A Tc
- Minimum Operating Temperature :
- -55 °C
- Transistor Polarity :
- N-Channel
- Number of Pins :
- 21
- Number of Terminations :
- 21
- Tradename :
- HiPerFET
- Power Dissipation-Max (Abs) :
- 680 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 10V
- Power Dissipation (Max) :
- 680W (Tc)
- Product Category :
- MOSFET
- RoHS :
- Details
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Turn-Off Delay Time :
- 115 ns
- Brand :
- IXYS
- Pin Count :
- 21
- Product Type :
- MOSFET
- Datasheets
- MMIX1F420N10T

N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads
MMIX1F420N10T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
MMIX1F420N10T Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)
MMIX1F420N10T Applications
There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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