MMIX1F420N10T
- Mfr.Part #
- MMIX1F420N10T
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 334A 24SMPD
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- JESD-30 Code :
- R-PDSO-G21
- Power Dissipation (Max) :
- 680W (Tc)
- Length :
- 25.25mm
- Channel Type :
- N
- RoHS :
- Details
- Number of Terminations :
- 21
- Package / Case :
- 24-PowerSMD, 21 Leads
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 670nC @ 10V
- Power Dissipation-Max :
- 680W Tc
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 1000 A
- Turn-Off Delay Time :
- 115 ns
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 100 V
- Channel Mode :
- Enhancement
- Base Product Number :
- MMIX1F420
- Turn On Delay Time :
- 47 ns
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Maximum Operating Temperature :
- +175 °C
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 10V
- Element Configuration :
- Single
- Package Type :
- SMPD
- ECCN Code :
- EAR99
- Configuration :
- Single
- Mount :
- Surface Mount
- Minimum Operating Temperature :
- -55 °C
- Drain Current-Max (Abs) (ID) :
- 334 A
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Width :
- 23.25mm
- Power Dissipation-Max (Abs) :
- 680 W
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements per Chip :
- 1
- Power Dissipation :
- 680W
- Product Status :
- Active
- Terminal Form :
- Gull wing
- Mounting Style :
- SMD/SMT
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 334A Tc
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Surface Mount
- Tradename :
- HiPerFET
- Terminal Position :
- Dual
- Factory Lead Time :
- 30 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Published :
- 2012
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Height :
- 5.7mm
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 334A
- Number of Pins :
- 21
- Case Connection :
- Isolated
- Pin Count :
- 21
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Supplier Device Package :
- 24-SMPD
- Number of Terminals :
- 21
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Datasheets
- MMIX1F420N10T

N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads
MMIX1F420N10T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
MMIX1F420N10T Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)
MMIX1F420N10T Applications
There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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