MMIX1F420N10T
- Mfr.Part #
- MMIX1F420N10T
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 334A 24SMPD
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 1000 A
- Manufacturer :
- IXYS
- Length :
- 25.25mm
- RoHS :
- Details
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Minimum Operating Temperature :
- -55 °C
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Supplier Device Package :
- 24-SMPD
- JESD-30 Code :
- R-PDSO-G21
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Channel Type :
- N
- Power Dissipation :
- 680W
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Terminal Position :
- Dual
- Width :
- 23.25mm
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Height :
- 5.7mm
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- +175 °C
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Package Type :
- SMPD
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 334 A
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 115 ns
- Tradename :
- HiPerFET
- Turn On Delay Time :
- 47 ns
- Power Dissipation (Max) :
- 680W (Tc)
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Published :
- 2012
- Surface Mount :
- yes
- Brand :
- IXYS
- Number of Terminals :
- 21
- Base Product Number :
- MMIX1F420
- Number of Terminations :
- 21
- Mounting Style :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 334A Tc
- Number of Elements per Chip :
- 1
- Continuous Drain Current (ID) :
- 334A
- Power Dissipation-Max (Abs) :
- 680 W
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 670nC @ 10V
- Case Connection :
- Isolated
- Vgs (Max) :
- ±20V
- Number of Pins :
- 21
- Package / Case :
- 24-PowerSMD, 21 Leads
- Factory Lead Time :
- 30 Weeks
- Power Dissipation-Max :
- 680W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 21
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 100 V
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Datasheets
- MMIX1F420N10T

N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads
MMIX1F420N10T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
MMIX1F420N10T Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)
MMIX1F420N10T Applications
There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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