MMIX1F420N10T

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Mfr.Part #
MMIX1F420N10T
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 100V 334A 24SMPD
Stock
16
In Stock :
16

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Lead Free :
Lead Free
Product Status :
Active
Drain to Source Voltage (Vdss) :
100V
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
1000 A
Manufacturer :
IXYS
Length :
25.25mm
RoHS :
Details
Drain-source On Resistance-Max :
0.0026Ohm
Minimum Operating Temperature :
-55 °C
Vgs(th) (Max) @ Id :
5V @ 8mA
Supplier Device Package :
24-SMPD
JESD-30 Code :
R-PDSO-G21
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Channel Type :
N
Power Dissipation :
680W
Number of Elements :
1
Number of Channels :
1 Channel
Product Category :
MOSFET
Terminal Position :
Dual
Width :
23.25mm
Transistor Polarity :
N-Channel
FET Feature :
--
Transistor Element Material :
SILICON
Height :
5.7mm
Avalanche Energy Rating (Eas) :
5000 mJ
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Maximum Operating Temperature :
+175 °C
Transistor Application :
SWITCHING
Package :
Tube
Polarity/Channel Type :
N-Channel
Terminal Form :
Gull wing
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Package Type :
SMPD
Configuration :
Single
Drain Current-Max (Abs) (ID) :
334 A
Product Type :
MOSFET
Turn-Off Delay Time :
115 ns
Tradename :
HiPerFET
Turn On Delay Time :
47 ns
Power Dissipation (Max) :
680W (Tc)
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Published :
2012
Surface Mount :
yes
Brand :
IXYS
Number of Terminals :
21
Base Product Number :
MMIX1F420
Number of Terminations :
21
Mounting Style :
SMD/SMT
Rds On (Max) @ Id, Vgs :
2.6m Ω @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C :
334A Tc
Number of Elements per Chip :
1
Continuous Drain Current (ID) :
334A
Power Dissipation-Max (Abs) :
680 W
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
670nC @ 10V
Case Connection :
Isolated
Vgs (Max) :
±20V
Number of Pins :
21
Package / Case :
24-PowerSMD, 21 Leads
Factory Lead Time :
30 Weeks
Power Dissipation-Max :
680W Tc
Operating Temperature :
-55°C~175°C TJ
Pin Count :
21
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Gate to Source Voltage (Vgs) :
20V
DS Breakdown Voltage-Min :
100 V
Mounting Type :
Surface Mount
Packaging :
Tube
Datasheets
MMIX1F420N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F420N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:21, Number of Pins:21, Package / Case:24-PowerSMD, 21 Leads, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, MMIX1F420N10T pinout, MMIX1F420N10T datasheet PDF, MMIX1F420N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F420N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse MMIX1F420N10T


N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads

MMIX1F420N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

MMIX1F420N10T Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)


MMIX1F420N10T Applications


There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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