MMIX1F420N10T

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Mfr.Part #
MMIX1F420N10T
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 100V 334A 24SMPD
Stock
16
In Stock :
16

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
21
Number of Channels :
1 Channel
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Product Category :
MOSFET
Manufacturer :
IXYS
Width :
23.25mm
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
SMD/SMT
Case Connection :
Isolated
Product Status :
Active
Drain to Source Voltage (Vdss) :
100V
Height :
5.7mm
Vgs(th) (Max) @ Id :
5V @ 8mA
Tradename :
HiPerFET
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 10V
Turn On Delay Time :
47 ns
Drain-source On Resistance-Max :
0.0026Ohm
Packaging :
Tube
Terminal Position :
Dual
Supplier Device Package :
24-SMPD
Package Type :
SMPD
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
334 A
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
5000 mJ
Lead Free :
Lead Free
Continuous Drain Current (ID) :
334A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
680W Tc
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
100 V
Brand :
IXYS
JESD-30 Code :
R-PDSO-G21
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Current - Continuous Drain (Id) @ 25°C :
334A Tc
Package / Case :
24-PowerSMD, 21 Leads
Transistor Element Material :
SILICON
Element Configuration :
Single
FET Feature :
--
Rds On (Max) @ Id, Vgs :
2.6m Ω @ 60A, 10V
Minimum Operating Temperature :
-55 °C
Length :
25.25mm
Channel Type :
N
Pin Count :
21
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Package :
Tube
Number of Terminations :
21
Transistor Application :
SWITCHING
Base Product Number :
MMIX1F420
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
670nC @ 10V
Power Dissipation (Max) :
680W (Tc)
Surface Mount :
yes
Number of Elements :
1
Factory Lead Time :
30 Weeks
Configuration :
Single
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+175 °C
Operating Temperature :
-55°C~175°C TJ
Product Type :
MOSFET
Terminal Form :
Gull wing
Published :
2012
Pulsed Drain Current-Max (IDM) :
1000 A
Turn-Off Delay Time :
115 ns
Number of Elements per Chip :
1
Power Dissipation :
680W
Reach Compliance Code :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max (Abs) :
680 W
Number of Terminals :
21
Datasheets
MMIX1F420N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F420N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:21, Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:24-PowerSMD, 21 Leads, Number of Terminations:21, Operating Temperature:-55°C~175°C TJ, MMIX1F420N10T pinout, MMIX1F420N10T datasheet PDF, MMIX1F420N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F420N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse MMIX1F420N10T


N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads

MMIX1F420N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

MMIX1F420N10T Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)


MMIX1F420N10T Applications


There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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