MMIX1F420N10T
- Mfr.Part #
- MMIX1F420N10T
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 334A 24SMPD
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 21
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Width :
- 23.25mm
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Style :
- SMD/SMT
- Case Connection :
- Isolated
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100V
- Height :
- 5.7mm
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Tradename :
- HiPerFET
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 10V
- Turn On Delay Time :
- 47 ns
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Packaging :
- Tube
- Terminal Position :
- Dual
- Supplier Device Package :
- 24-SMPD
- Package Type :
- SMPD
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 334 A
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 334A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 680W Tc
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 100 V
- Brand :
- IXYS
- JESD-30 Code :
- R-PDSO-G21
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Current - Continuous Drain (Id) @ 25°C :
- 334A Tc
- Package / Case :
- 24-PowerSMD, 21 Leads
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Minimum Operating Temperature :
- -55 °C
- Length :
- 25.25mm
- Channel Type :
- N
- Pin Count :
- 21
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Number of Terminations :
- 21
- Transistor Application :
- SWITCHING
- Base Product Number :
- MMIX1F420
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 670nC @ 10V
- Power Dissipation (Max) :
- 680W (Tc)
- Surface Mount :
- yes
- Number of Elements :
- 1
- Factory Lead Time :
- 30 Weeks
- Configuration :
- Single
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- +175 °C
- Operating Temperature :
- -55°C~175°C TJ
- Product Type :
- MOSFET
- Terminal Form :
- Gull wing
- Published :
- 2012
- Pulsed Drain Current-Max (IDM) :
- 1000 A
- Turn-Off Delay Time :
- 115 ns
- Number of Elements per Chip :
- 1
- Power Dissipation :
- 680W
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 680 W
- Number of Terminals :
- 21
- Datasheets
- MMIX1F420N10T

N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads
MMIX1F420N10T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
MMIX1F420N10T Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)
MMIX1F420N10T Applications
There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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