MMIX1F420N10T

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Mfr.Part #
MMIX1F420N10T
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 100V 334A 24SMPD
Stock
16
In Stock :
16

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
JESD-30 Code :
R-PDSO-G21
Power Dissipation (Max) :
680W (Tc)
Length :
25.25mm
Channel Type :
N
RoHS :
Details
Number of Terminations :
21
Package / Case :
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs :
2.6m Ω @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs :
670nC @ 10V
Power Dissipation-Max :
680W Tc
Package :
Tube
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
1000 A
Turn-Off Delay Time :
115 ns
Product Category :
MOSFET
DS Breakdown Voltage-Min :
100 V
Channel Mode :
Enhancement
Base Product Number :
MMIX1F420
Turn On Delay Time :
47 ns
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Maximum Operating Temperature :
+175 °C
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 10V
Element Configuration :
Single
Package Type :
SMPD
ECCN Code :
EAR99
Configuration :
Single
Mount :
Surface Mount
Minimum Operating Temperature :
-55 °C
Drain Current-Max (Abs) (ID) :
334 A
Avalanche Energy Rating (Eas) :
5000 mJ
Width :
23.25mm
Power Dissipation-Max (Abs) :
680 W
Operating Mode :
ENHANCEMENT MODE
Number of Elements per Chip :
1
Power Dissipation :
680W
Product Status :
Active
Terminal Form :
Gull wing
Mounting Style :
SMD/SMT
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
334A Tc
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
100V
Mounting Type :
Surface Mount
Tradename :
HiPerFET
Terminal Position :
Dual
Factory Lead Time :
30 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Lead Free :
Lead Free
Surface Mount :
yes
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
Published :
2012
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
FET Feature :
--
Height :
5.7mm
Manufacturer :
IXYS
Continuous Drain Current (ID) :
334A
Number of Pins :
21
Case Connection :
Isolated
Pin Count :
21
Vgs(th) (Max) @ Id :
5V @ 8mA
Transistor Application :
SWITCHING
Product Type :
MOSFET
Supplier Device Package :
24-SMPD
Number of Terminals :
21
Drain-source On Resistance-Max :
0.0026Ohm
Number of Elements :
1
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Datasheets
MMIX1F420N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F420N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:21, Package / Case:24-PowerSMD, 21 Leads, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Pins:21, MMIX1F420N10T pinout, MMIX1F420N10T datasheet PDF, MMIX1F420N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F420N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse MMIX1F420N10T


N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads

MMIX1F420N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

MMIX1F420N10T Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)


MMIX1F420N10T Applications


There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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