MMIX1F160N30T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

SMD/SMT

Mount :

Surface Mount

Transistor Polarity :

N-Channel

Element Configuration :

Single

FET Feature :

--

Power Dissipation :

570W

Channel Mode :

Enhancement

Packaging :

Tube

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

570 W

ECCN Code :

EAR99

Height :

5.7mm

Manufacturer :

IXYS

Surface Mount :

yes

Turn On Delay Time :

34 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Supplier Device Package :

24-SMPD

Avalanche Energy Rating (Eas) :

3000 mJ

Turn-Off Delay Time :

90 ns

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Brand :

IXYS

Base Product Number :

MMIX1F160

Terminal Form :

Gull wing

Product Type :

MOSFET

Package / Case :

24-PowerSMD, 21 Leads

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

20m Ω @ 60A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Product Status :

Active

Power Dissipation-Max :

570W Tc

Pin Count :

21

Case Connection :

Isolated

Continuous Drain Current (ID) :

102A

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

440A

JESD-30 Code :

R-PDSO-G21

Number of Terminals :

21

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 8mA

Maximum Operating Temperature :

+ 150 C

Length :

25.25mm

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.02Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Number of Terminations :

21

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Tradename :

HiPerFET

FET Type :

N-Channel

Number of Channels :

1 Channel

Terminal Position :

Dual

Published :

2012

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

21

Gate Charge (Qg) (Max) @ Vgs :

335nC @ 10V

DS Breakdown Voltage-Min :

300V

Power Dissipation (Max) :

570W (Tc)

Drain Current-Max (Abs) (ID) :

102 A

Product Category :

MOSFET

Width :

23.25mm

Package :

Tube

Drain to Source Voltage (Vdss) :

300V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

30 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR