MMIX1F40N110P
- Mfr.Part #
- MMIX1F40N110P
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 1100V 24A 24SMPD
- Stock
- 3,364
- In Stock :
- 3,364
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Power Dissipation-Max :
- 500W Tc
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation (Max) :
- 500W (Tc)
- Package / Case :
- 24-PowerSMD, 21 Leads
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Factory Lead Time :
- 30 Weeks
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 24 A
- Terminal Form :
- Gull wing
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Width :
- 23.25mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PDSO-G21
- Pulsed Drain Current-Max (IDM) :
- 100A
- Drain to Source Voltage (Vdss) :
- 1100V
- FET Feature :
- --
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 310nC @ 10V
- Length :
- 25.25mm
- Transistor Polarity :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 20A, 10V
- Number of Elements :
- 1
- Mounting Style :
- SMD/SMT
- Product Status :
- Active
- Brand :
- IXYS
- Turn On Delay Time :
- 53 ns
- Number of Pins :
- 24
- Gate to Source Voltage (Vgs) :
- 40V
- Published :
- 2012
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 1100V
- Base Product Number :
- MMIX1F40
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- 24-SMPD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 21
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 500 W
- Product Type :
- MOSFET
- Height :
- 5.7mm
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 24A
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 21
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 110 ns
- Series :
- HiPerFET™, PolarP2™
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Tradename :
- HiPerFET
- Drain-source On Resistance-Max :
- 0.29Ohm
- Pin Count :
- 21
- Datasheets
- MMIX1F40N110P
N-Channel Tube 290m Ω @ 20A, 10V ±30V 19000pF @ 25V 310nC @ 10V 1100V 24-PowerSMD, 21 Leads
MMIX1F40N110P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 19000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.For normal operation, maintain the DS breakdown voltage above 1100V.To operate this transistor, you need to apply a 1100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
MMIX1F40N110P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
the turn-off delay time is 110 ns
based on its rated peak drain current 100A.
a 1100V drain to source voltage (Vdss)
MMIX1F40N110P Applications
There are a lot of IXYS
MMIX1F40N110P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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