MMIX1F40N110P

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Mfr.Part #
MMIX1F40N110P
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 1100V 24A 24SMPD
Stock
3,364
In Stock :
3,364

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Element Configuration :
Single
Power Dissipation-Max :
500W Tc
Case Connection :
Isolated
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation (Max) :
500W (Tc)
Package / Case :
24-PowerSMD, 21 Leads
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Factory Lead Time :
30 Weeks
Package :
Tube
Drain Current-Max (Abs) (ID) :
24 A
Terminal Form :
Gull wing
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Width :
23.25mm
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PDSO-G21
Pulsed Drain Current-Max (IDM) :
100A
Drain to Source Voltage (Vdss) :
1100V
FET Feature :
--
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
24A Tc
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
310nC @ 10V
Length :
25.25mm
Transistor Polarity :
N-Channel
Rds On (Max) @ Id, Vgs :
290m Ω @ 20A, 10V
Number of Elements :
1
Mounting Style :
SMD/SMT
Product Status :
Active
Brand :
IXYS
Turn On Delay Time :
53 ns
Number of Pins :
24
Gate to Source Voltage (Vgs) :
40V
Published :
2012
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
1100V
Base Product Number :
MMIX1F40
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
24-SMPD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
21
Polarity/Channel Type :
N-Channel
Power Dissipation-Max (Abs) :
500 W
Product Type :
MOSFET
Height :
5.7mm
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
24A
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
FET Type :
N-Channel
Mounting Type :
Surface Mount
Number of Terminations :
21
Terminal Position :
Dual
Turn-Off Delay Time :
110 ns
Series :
HiPerFET™, PolarP2™
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Drain-source On Resistance-Max :
0.29Ohm
Pin Count :
21
Datasheets
MMIX1F40N110P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F40N110P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:24-PowerSMD, 21 Leads, Number of Pins:24, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:21, MMIX1F40N110P pinout, MMIX1F40N110P datasheet PDF, MMIX1F40N110P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F40N110P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 290m Ω @ 20A, 10V ±30V 19000pF @ 25V 310nC @ 10V 1100V 24-PowerSMD, 21 Leads

MMIX1F40N110P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 19000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.For normal operation, maintain the DS breakdown voltage above 1100V.To operate this transistor, you need to apply a 1100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

MMIX1F40N110P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
the turn-off delay time is 110 ns
based on its rated peak drain current 100A.
a 1100V drain to source voltage (Vdss)


MMIX1F40N110P Applications


There are a lot of IXYS
MMIX1F40N110P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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