MMIX1F230N20T

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Mfr.Part #
MMIX1F230N20T
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 200V 168A 24SMPD
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Product Type :
MOSFET
Transistor Application :
SWITCHING
Number of Terminations :
21
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
62 ns
Height :
5.7mm
ECCN Code :
EAR99
Number of Elements :
1
Avalanche Energy Rating (Eas) :
3000 mJ
Number of Terminals :
21
Published :
2012
Transistor Element Material :
SILICON
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Gate to Source Voltage (Vgs) :
30V
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
28000pF @ 25V
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~175°C TJ
Length :
25.25mm
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Reach Compliance Code :
Compliant
Brand :
IXYS
Drain to Source Voltage (Vdss) :
200V
Gate Charge (Qg) (Max) @ Vgs :
378nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
Tradename :
HiPerFET
JESD-30 Code :
R-PDSO-G21
Pin Count :
21
FET Type :
N-Channel
Power Dissipation (Max) :
600W (Tc)
Supplier Device Package :
24-SMPD
Mounting Type :
Surface Mount
Packaging :
Tube
Base Product Number :
MMIX1F230
Drain-source On Resistance-Max :
0.0083Ohm
Vgs(th) (Max) @ Id :
5V @ 8mA
Surface Mount :
yes
Package / Case :
24-PowerSMD, 21 Leads
Width :
23.25mm
Terminal Form :
Gull wing
Transistor Polarity :
N-Channel
Terminal Position :
Dual
Turn On Delay Time :
58 ns
Package :
Tube
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
24
Power Dissipation-Max :
600W Tc
Element Configuration :
Single
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Subcategory :
MOSFETs
Factory Lead Time :
30 Weeks
Current - Continuous Drain (Id) @ 25°C :
168A Tc
Manufacturer :
IXYS
DS Breakdown Voltage-Min :
200V
Continuous Drain Current (ID) :
168A
Pulsed Drain Current-Max (IDM) :
630A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Rds On (Max) @ Id, Vgs :
8.3m Ω @ 60A, 10V
Mounting Style :
SMD/SMT
Datasheets
MMIX1F230N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F230N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:21, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:24-PowerSMD, 21 Leads, Number of Pins:24, MMIX1F230N20T pinout, MMIX1F230N20T datasheet PDF, MMIX1F230N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F230N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 8.3m Ω @ 60A, 10V ±20V 28000pF @ 25V 378nC @ 10V 200V 24-PowerSMD, 21 Leads

MMIX1F230N20T Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 28000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 168A amps.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 630A.A turn-on delay time of 58 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

MMIX1F230N20T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 168A
the turn-off delay time is 62 ns
based on its rated peak drain current 630A.
a 200V drain to source voltage (Vdss)


MMIX1F230N20T Applications


There are a lot of IXYS
MMIX1F230N20T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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