MMIX1F360N15T2

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Mfr.Part #
MMIX1F360N15T2
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 150V 235A 24SMPD
Stock
17,321
In Stock :
17,321

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
GigaMOS™, TrenchT2™
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
47500pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Tradename :
HiPerFET
Pin Count :
21
Avalanche Energy Rating (Eas) :
3000 mJ
Mounting Style :
SMD/SMT
Maximum Operating Temperature :
+ 175 C
Turn-Off Delay Time :
115 ns
Length :
25.25mm
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
24
Drain to Source Voltage (Vdss) :
150V
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 100A, 10V
Published :
2012
Type :
TrenchT2 GigaMOS HiperFET Power MOSFET
Gate Charge (Qg) (Max) @ Vgs :
715nC @ 10V
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
235 A
Operating Mode :
ENHANCEMENT MODE
Width :
23.25mm
RoHS :
Details
Continuous Drain Current (ID) :
235A
Transistor Application :
SWITCHING
FET Feature :
--
Package :
Tube
Power Dissipation-Max (Abs) :
680 W
Package / Case :
24-PowerSMD, 21 Leads
Rise Time :
170 ns
Number of Terminations :
21
Minimum Operating Temperature :
- 55 C
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Turn On Delay Time :
50 ns
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Number of Elements :
1
ECCN Code :
EAR99
Case Connection :
Isolated
Power Dissipation (Max) :
680W (Tc)
Gate to Source Voltage (Vgs) :
30V
Brand :
IXYS
Element Configuration :
Single
Mount :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
5.7mm
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
150V
Product Category :
MOSFET
Surface Mount :
yes
JESD-30 Code :
R-PDSO-G21
Vgs(th) (Max) @ Id :
5V @ 8mA
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.0044Ohm
Product Type :
MOSFET
Power Dissipation-Max :
680W Tc
Base Product Number :
MMIX1F360
Supplier Device Package :
24-SMPD
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Number of Terminals :
21
Current - Continuous Drain (Id) @ 25°C :
235A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
900A
Terminal Position :
Dual
Datasheets
MMIX1F360N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F360N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:24, Operating Temperature:-55°C~175°C TJ, Type:TrenchT2 GigaMOS HiperFET Power MOSFET, Package / Case:24-PowerSMD, 21 Leads, Number of Terminations:21, Mounting Type:Surface Mount, MMIX1F360N15T2 pinout, MMIX1F360N15T2 datasheet PDF, MMIX1F360N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F360N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse MMIX1F360N15T2


N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 47500pF @ 25V 715nC @ 10V 150V 24-PowerSMD, 21 Leads

MMIX1F360N15T2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 47500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 235A.As shown in the table below, the drain current of this device is 235 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 115 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 900A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 50 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

MMIX1F360N15T2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 235A
the turn-off delay time is 115 ns
based on its rated peak drain current 900A.
a 150V drain to source voltage (Vdss)


MMIX1F360N15T2 Applications


There are a lot of IXYS
MMIX1F360N15T2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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