MMIX1F360N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

47500pF @ 25V

Package / Case :

24-PowerSMD, 21 Leads

Drain-source On Resistance-Max :

0.0044Ohm

Number of Terminations :

21

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

115 ns

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

680W (Tc)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

150V

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 100A, 10V

Factory Lead Time :

30 Weeks

Pin Count :

21

Height :

5.7mm

Mounting Type :

Surface Mount

Tradename :

HiPerFET

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Product Number :

MMIX1F360

Operating Temperature :

-55°C~175°C TJ

Product Type :

MOSFET

Brand :

IXYS

Case Connection :

Isolated

FET Type :

N-Channel

Vgs (Max) :

±20V

Power Dissipation-Max :

680W Tc

FET Feature :

--

Width :

23.25mm

Product Status :

Active

Vgs(th) (Max) @ Id :

5V @ 8mA

Power Dissipation-Max (Abs) :

680 W

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

25.25mm

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

235A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

150V

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

JESD-30 Code :

R-PDSO-G21

Surface Mount :

yes

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

Series :

GigaMOS™, TrenchT2™

Drain Current-Max (Abs) (ID) :

235 A

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

715nC @ 10V

Terminal Position :

Dual

Rise Time :

170 ns

Turn On Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Pulsed Drain Current-Max (IDM) :

900A

Current - Continuous Drain (Id) @ 25°C :

235A Tc

Transistor Element Material :

SILICON

Supplier Device Package :

24-SMPD

Package :

Tube

Number of Terminals :

21

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 175 C

Type :

TrenchT2 GigaMOS HiperFET Power MOSFET

Number of Pins :

24

Gate to Source Voltage (Vgs) :

30V

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Elements :

1

Packaging :

Tube

RoHS :

Details