MMDT5551

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

Matte Tin (Sn)

Transition Frequency :

100MHz

Current - Collector (Ic) (Max) :

200mA

Published :

2000

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G6

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1mA, 10mA

Factory Lead Time :

12 Weeks

Current - Collector Cutoff (Max) :

50nA ICBO

Qualification Status :

Not Qualified

Base Part Number :

MMDT5551

Mounting Type :

Surface Mount

Pin Count :

6

Number of Elements :

2

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Configuration :

SEPARATE, 2 ELEMENTS

Power - Max :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

0.2W

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Frequency - Transition :

300MHz

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

160V

JESD-609 Code :

e3

Polarity/Channel Type :

NPN