MMDT2227M-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Height :

1.1mm

Frequency - Transition :

300MHz 200MHz

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Width :

1.6mm

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Number of Pins :

6

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Max Collector Current :

600mA

Gain Bandwidth Product :

300MHz

Emitter Base Voltage (VEBO) :

6V

Package / Case :

SOT-23-6

Pbfree Code :

yes

ECCN Code :

EAR99

Base Part Number :

MMDT2227M

Frequency :

300MHz

Radiation Hardening :

No

Max Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3mm

Current - Collector Cutoff (Max) :

10nA ICBO

Operating Temperature :

-55°C~150°C TJ

Published :

2007

Transistor Application :

SWITCHING

Weight :

29.993795mg

Current Rating :

600mA

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

Collector Emitter Voltage (VCEO) :

1V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Pin Count :

6

JESD-609 Code :

e3

Number of Terminations :

6

Number of Elements :

2

Mount :

Surface Mount

Transistor Type :

NPN, PNP

Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

75V

Factory Lead Time :

15 Weeks

Transition Frequency :

300MHz

hFE Min :

35

Max Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V