MMDT2222A-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Continuous Collector Current :

600mA

Height :

1mm

Mount :

Surface Mount

Gain Bandwidth Product :

300MHz

Width :

1.35mm

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

10nA ICBO

Transition Frequency :

300MHz

Voltage - Rated DC :

40V

Factory Lead Time :

19 Weeks

Pbfree Code :

yes

Power Dissipation :

200mW

Max Collector Current :

600mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Base Voltage (VCBO) :

75V

Lead Free :

Lead Free

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1V

Packaging :

Tape and Reel (TR)

Length :

2.2mm

Mounting Type :

Surface Mount

Current Rating :

600mA

Weight :

6.010099mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Published :

2003

Number of Terminations :

6

Frequency :

300MHz

JESD-609 Code :

e3

Terminal Form :

Gull wing

Base Part Number :

MMDT2222A

Termination :

SMD/SMT

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

40V

Transistor Type :

2 NPN (Dual)

REACH SVHC :

No SVHC

Max Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

6V

Terminal Finish :

Matte Tin (Sn)

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

40V

Number of Pins :

6

hFE Min :

100

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Turn On Time-Max (ton) :

35ns

Max Breakdown Voltage :

40V

Pin Count :

6

Radiation Hardening :

No

Transistor Element Material :

SILICON