MMDT2227

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Polarity :

NPN, PNP

Power Dissipation :

300mW

Max Collector Current :

600mA

Transistor Type :

NPN, PNP

Collector Emitter Breakdown Voltage :

60V

Package / Case :

SOT-23-6

Pin Count :

6

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

300MHz

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Width :

1.6mm

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

1V

Factory Lead Time :

15 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

hFE Min :

35

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Max Power Dissipation :

300mW

Gain Bandwidth Product :

300MHz

Published :

2007

Frequency - Transition :

300MHz 200MHz

Length :

3mm

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

75V

Emitter Base Voltage (VEBO) :

6V

Number of Terminations :

6

Transistor Application :

SWITCHING

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Weight :

29.993795mg

Current - Collector Cutoff (Max) :

10nA ICBO

Current Rating :

600mA

Mount :

Surface Mount

Height :

1.1mm

Base Part Number :

MMDT2227M

Number of Pins :

6

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Frequency :

300MHz

Terminal Form :

Gull wing