MMDT2222V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Frequency :

300MHz

Pin Count :

6

Max Collector Current :

600mA

Transition Frequency :

300MHz

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Voltage - Rated DC :

40V

Factory Lead Time :

19 Weeks

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Collector Emitter Breakdown Voltage :

40V

Number of Elements :

2

Published :

2005

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Collector Base Voltage (VCBO) :

75V

Number of Pins :

6

Height :

600μm

Current - Collector Cutoff (Max) :

10nA ICBO

Lead Free :

Lead Free

hFE Min :

35

Mounting Type :

Surface Mount

Transistor Type :

2 NPN (Dual)

Collector Emitter Voltage (VCEO) :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

150mW

Width :

1.2mm

Current Rating :

600mA

Gain Bandwidth Product :

300MHz

Pbfree Code :

yes

Length :

1.6mm

Collector Emitter Saturation Voltage :

1V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Weight :

3.005049mg

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Element Configuration :

Dual

REACH SVHC :

No SVHC

Package / Case :

SOT-563, SOT-666

Emitter Base Voltage (VEBO) :

6V

Number of Terminations :

6

Polarity :

NPN

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

MMDT2222V