MMDT2222V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

600mA

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

10nA ICBO

Voltage - Rated DC :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

40V

ECCN Code :

EAR99

Element Configuration :

Dual

Max Breakdown Voltage :

40V

Published :

2005

Length :

1.6mm

Max Power Dissipation :

150mW

Pin Count :

6

Number of Terminations :

6

Gain Bandwidth Product :

300MHz

Collector Base Voltage (VCBO) :

75V

Frequency :

300MHz

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Factory Lead Time :

19 Weeks

Pbfree Code :

yes

Radiation Hardening :

No

Terminal Form :

Flat

Transition Frequency :

300MHz

Height :

600μm

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1V

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN (Dual)

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Mounting Type :

Surface Mount

Polarity :

NPN

Power Dissipation :

150mW

Weight :

3.005049mg

Collector Emitter Breakdown Voltage :

40V

hFE Min :

35

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

6V

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MMDT2222V

Max Collector Current :

600mA

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Width :

1.2mm