MMDT2222V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

600mA

Collector Emitter Breakdown Voltage :

40V

Pbfree Code :

yes

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1V

Collector Emitter Voltage (VCEO) :

40V

Width :

1.2mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Voltage - Rated DC :

40V

Weight :

3.005049mg

hFE Min :

35

Length :

1.6mm

Element Configuration :

Dual

Max Collector Current :

600mA

Gain Bandwidth Product :

300MHz

Pin Count :

6

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Type :

2 NPN (Dual)

Base Part Number :

MMDT2222V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

600μm

Frequency :

300MHz

Number of Pins :

6

Number of Elements :

2

Collector Base Voltage (VCBO) :

75V

Peak Reflow Temperature (Cel) :

260

Published :

2005

Factory Lead Time :

19 Weeks

Max Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Power Dissipation :

150mW

Transition Frequency :

300MHz

Max Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

40