MMDT2222V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

NPN

Base Part Number :

MMDT2222V

Published :

2005

Collector Base Voltage (VCBO) :

75V

Factory Lead Time :

19 Weeks

Voltage - Rated DC :

40V

Max Power Dissipation :

150mW

Radiation Hardening :

No

Number of Pins :

6

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1V

Max Collector Current :

600mA

Mounting Type :

Surface Mount

Gain Bandwidth Product :

300MHz

Length :

1.6mm

ECCN Code :

EAR99

Max Breakdown Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 NPN (Dual)

Transition Frequency :

300MHz

Height :

600μm

Frequency :

300MHz

Current - Collector Cutoff (Max) :

10nA ICBO

Packaging :

Tape and Reel (TR)

Width :

1.2mm

Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Pbfree Code :

yes

Number of Elements :

2

Pin Count :

6

Weight :

3.005049mg

Current Rating :

600mA

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

40V

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-563, SOT-666

hFE Min :

35

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Terminal Form :

Flat

Mount :

Surface Mount

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

40V

Terminal Finish :

Matte Tin (Sn)