MMDF3N04HDR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 32V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Pin Count :

8

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

Not Qualified

Min Operating Temperature :

-55°C

Number of Elements :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED

JESD-609 Code :

e0

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

3.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Power Dissipation :

1.39W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Pbfree Code :

No

Power Dissipation :

2W

Packaging :

Cut Tape (CT)

Base Part Number :

MMDF3N04HD

Terminal Finish :

Tin/Lead (Sn/Pb)

Feedback Cap-Max (Crss) :

96 pF

Drain Current-Max (Abs) (ID) :

3.4A

Turn-Off Delay Time :

15 ns

Voltage - Rated DC :

40V

Number of Terminations :

8

ECCN Code :

EAR99

Fall Time (Typ) :

19 ns

Continuous Drain Current (ID) :

3A

Rise Time :

15ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

Current Rating :

3A

Peak Reflow Temperature (Cel) :

240

RoHS Status :

Non-RoHS Compliant

Drain to Source Breakdown Voltage :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

80m Ω @ 3.4A, 10V