MJW21196
- Mfr.Part #
- MJW21196
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 16A TO247-3
- Stock
- 6,802
- In Stock :
- 6,802
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AD
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 250V
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 3V
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- hFE Min :
- 20
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Published :
- 2010
- Current Rating :
- 16A
- Package / Case :
- TO-247-3
- Voltage - Rated DC :
- 250V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.2A, 16A
- Max Power Dissipation :
- 200W
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Max Collector Current :
- 16A
- Element Configuration :
- Single
- JESD-609 Code :
- e0
- Collector Emitter Saturation Voltage :
- 1V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Transition Frequency :
- 4MHz
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Base Voltage (VCBO) :
- 400V
- Packaging :
- Tube
- Pin Count :
- 3
- Surface Mount :
- No
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8A 5V
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 4MHz
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- MJW21196

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
MJW21196 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 8A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJW21196 Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJW21196 Applications
There are a lot of ON Semiconductor
MJW21196 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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