MJW21193G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

16.26mm

Frequency :

4MHz

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Width :

5.3mm

Height :

21.08mm

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

400V

Surface Mount :

No

Published :

1995

Lead Free :

Lead Free

Transition Frequency :

4MHz

Power Dissipation :

200W

Max Collector Current :

16A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Gain Bandwidth Product :

4MHz

Collector Emitter Voltage (VCEO) :

250V

REACH SVHC :

No SVHC

hFE Min :

20

Current - Collector Cutoff (Max) :

100μA

Factory Lead Time :

2 Weeks

Weight :

22.679619g

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Pin Count :

3

Collector Emitter Breakdown Voltage :

250V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

200W

Transistor Application :

AMPLIFIER

Operating Temperature :

-65°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8A 5V

Transistor Type :

PNP

Element Configuration :

Single

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

1.4V

Polarity/Channel Type :

PNP

Number of Elements :

1

Voltage - Rated DC :

-250V

Radiation Hardening :

No

Current Rating :

-16A

Case Connection :

Isolated

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3