MJW21196G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100μA

Element Configuration :

Single

hFE Min :

20

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.2A, 16A

Frequency :

4MHz

Terminal Finish :

Tin (Sn)

Current Rating :

16A

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1V

Surface Mount :

No

Voltage - Rated DC :

250V

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

250V

Pin Count :

3

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8A 5V

Number of Terminations :

3

Factory Lead Time :

13 Weeks

Number of Pins :

3

Transition Frequency :

4MHz

Lead Free :

Lead Free

JEDEC-95 Code :

TO-247AD

Width :

5.3mm

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

250V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Published :

2006

Height :

21.08mm

Power Dissipation :

200W

Pbfree Code :

yes

Packaging :

Tube

Max Collector Current :

16A

Radiation Hardening :

No

Length :

16.26mm

Max Power Dissipation :

200W

Package / Case :

TO-247-3

Gain Bandwidth Product :

4MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

400V