MJW21192G
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- Mfr.Part #
- MJW21192G
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 8A TO247-3
- Stock
- 22,949
- In Stock ：
- 22,949
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 125W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -150V
- Package / Case :
- TO-247-3
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Pins :
- 3
- hFE Min :
- 15
- Mount :
- Through Hole
- Pin Count :
- 3
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 150V
- Packaging :
- Tube
- Transition Frequency :
- 4MHz
- Current - Collector (Ic) (Max) :
- 8A
- Current - Collector Cutoff (Max) :
- 10μA
- JEDEC-95 Code :
- TO-247AE
- Published :
- 2005
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 150V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Max Collector Current :
- 8A
- Collector Emitter Voltage (VCEO) :
- 2V
- Gain Bandwidth Product :
- 4MHz
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- Current Rating :
- -4A
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1.6A, 8A
- Number of Elements :
- 1
- Datasheets
- MJW21192G
NPN -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
MJW21192G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 4A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1.6A, 8A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
MJW21192G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 1.6A, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 4MHz
MJW21192G Applications
There are a lot of ON Semiconductor
MJW21192G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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