MJW21194G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

hFE Min :

20

Lead Free :

Lead Free

Radiation Hardening :

No

Current Rating :

16A

Package / Case :

TO-247-3

Max Collector Current :

16A

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

250V

Number of Pins :

3

Pin Count :

3

Collector Emitter Saturation Voltage :

1.4V

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

4MHz

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Voltage (VCEO) :

250V

Collector Base Voltage (VCBO) :

400V

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8A 5V

Element Configuration :

Single

Number of Terminations :

3

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

2 Weeks

Height :

21.08mm

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Width :

5.3mm

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Voltage - Rated DC :

250V

Case Connection :

Isolated

Packaging :

Tube

Transition Frequency :

4MHz

Max Power Dissipation :

200W

Length :

16.26mm

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

200W

Frequency :

4MHz