MJW21194
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- Mfr.Part #
- MJW21194
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 16A TO247-3
- Stock
- 6,705
- In Stock ：
- 6,705
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA
- Transition Frequency :
- 4MHz
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Published :
- 2005
- Number of Elements :
- 1
- Frequency :
- 4MHz
- Transistor Type :
- NPN
- Max Collector Current :
- 16A
- Surface Mount :
- No
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 250V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 20
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 250V
- Packaging :
- Tube
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Length :
- 16.26mm
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 200W
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 1.4V
- Collector Base Voltage (VCBO) :
- 400V
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8A 5V
- Width :
- 5.3mm
- Height :
- 21.08mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Breakdown Voltage :
- 250V
- Radiation Hardening :
- No
- Current Rating :
- 16A
- Gain Bandwidth Product :
- 4MHz
- JESD-609 Code :
- e3
- Power Dissipation :
- 200W
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJW21194
NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
MJW21194G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 8A 5V.With a collector emitter saturation voltage of 1.4V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 3.2A, 16A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 16A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 16A volts at its maximum.
MJW21194G Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJW21194G Applications
There are a lot of ON Semiconductor
MJW21194G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| MJW21196 | onsemi | 6,802 | TRANS NPN 250V 16A TO247-3 |
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