MJE703G

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Mfr.Part #
MJE703G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO126
Stock
2,736
In Stock :
2,736

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
2.5V
Power Dissipation :
40W
Transition Frequency :
1MHz
Published :
2006
Number of Pins :
3
Base Part Number :
MJE703
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Breakdown Voltage :
80V
Number of Terminations :
3
Height :
11.04mm
Length :
7.74mm
REACH SVHC :
No SVHC
Element Configuration :
Single
Number of Elements :
1
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Transistor Application :
AMPLIFIER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Max Collector Current :
4A
JESD-609 Code :
e3
Max Power Dissipation :
40W
Transistor Type :
PNP - Darlington
Transistor Element Material :
SILICON
Voltage - Rated DC :
-80V
Lead Free :
Lead Free
Width :
2.66mm
Factory Lead Time :
2 Weeks
Pbfree Code :
yes
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Radiation Hardening :
No
Polarity :
PNP
Package / Case :
TO-225AA, TO-126-3
hFE Min :
100
Packaging :
Bulk
Pin Count :
3
Current Rating :
-4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
100μA
Halogen Free :
Halogen Free
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Additional Feature :
BUILT IN BIAS RESISTOR
Collector Base Voltage (VCBO) :
80V
Weight :
4.535924g
Datasheets
MJE703G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE703G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:MJE703, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, MJE703G pinout, MJE703G datasheet PDF, MJE703G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE703G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE703G


PNP - Darlington -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

MJE703G Overview


DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.8V @ 40mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 1MHz.In extreme cases, the collector current can be as low as 4A volts.

MJE703G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz


MJE703G Applications


There are a lot of ON Semiconductor
MJE703G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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