MJE703G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

4A

Collector Emitter Breakdown Voltage :

80V

Height :

11.04mm

Collector Emitter Saturation Voltage :

2.5V

Pbfree Code :

yes

Surface Mount :

No

Number of Pins :

3

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

80V

Transistor Application :

AMPLIFIER

Polarity :

PNP

Width :

2.66mm

Current Rating :

-4A

Radiation Hardening :

No

JESD-609 Code :

e3

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

80V

Additional Feature :

BUILT IN BIAS RESISTOR

Transition Frequency :

1MHz

hFE Min :

100

Published :

2006

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Number of Terminations :

3

Max Power Dissipation :

40W

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

100μA

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Length :

7.74mm

Pin Count :

3

Base Part Number :

MJE703

Halogen Free :

Halogen Free

Number of Elements :

1

Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Transistor Type :

PNP - Darlington

Package / Case :

TO-225AA, TO-126-3