MJE703G
- Mfr.Part #
- MJE703G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 2,736
- In Stock :
- 2,736
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2.5V
- Power Dissipation :
- 40W
- Transition Frequency :
- 1MHz
- Published :
- 2006
- Number of Pins :
- 3
- Base Part Number :
- MJE703
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Height :
- 11.04mm
- Length :
- 7.74mm
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 40W
- Transistor Type :
- PNP - Darlington
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- Width :
- 2.66mm
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Radiation Hardening :
- No
- Polarity :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 100
- Packaging :
- Bulk
- Pin Count :
- 3
- Current Rating :
- -4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100μA
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Collector Base Voltage (VCBO) :
- 80V
- Weight :
- 4.535924g
- Datasheets
- MJE703G
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PNP - Darlington -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
MJE703G Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.8V @ 40mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 1MHz.In extreme cases, the collector current can be as low as 4A volts.
MJE703G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz
MJE703G Applications
There are a lot of ON Semiconductor
MJE703G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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