MJE702

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Length :

6.35mm

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Height :

6.35mm

Base Part Number :

MJE702

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

-80V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP - Darlington

Power Dissipation :

40W

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Width :

6.35mm

Additional Feature :

BUILT IN BIAS RESISTOR

Factory Lead Time :

2 Weeks

Surface Mount :

No

Max Collector Current :

4A

hFE Min :

100

Pin Count :

3

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

80V

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100μA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Max Power Dissipation :

40W

Collector Emitter Saturation Voltage :

2.5V

Packaging :

Bulk

Published :

2006

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Element Configuration :

Single

Current Rating :

-4A

Collector Base Voltage (VCBO) :

80V

ECCN Code :

EAR99

Package / Case :

TO-225AA, TO-126-3

Number of Elements :

1

Lead Free :

Lead Free

Transition Frequency :

1MHz

Collector Emitter Breakdown Voltage :

80V

Weight :

4.535924g