MJE702G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

40W

REACH SVHC :

No SVHC

Additional Feature :

BUILT IN BIAS RESISTOR

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Published :

2006

Length :

6.35mm

Number of Pins :

3

Number of Elements :

1

Collector Base Voltage (VCBO) :

80V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Pin Count :

3

Radiation Hardening :

No

Voltage - Rated DC :

-80V

Collector Emitter Voltage (VCEO) :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Surface Mount :

No

Current - Collector Cutoff (Max) :

100μA

Factory Lead Time :

2 Weeks

Weight :

4.535924g

hFE Min :

100

Transistor Type :

PNP - Darlington

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

2.5V

Transition Frequency :

1MHz

Collector Emitter Breakdown Voltage :

80V

Halogen Free :

Halogen Free

Polarity :

PNP

Current Rating :

-4A

Terminal Finish :

Tin (Sn)

Base Part Number :

MJE702

Width :

6.35mm

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Number of Terminations :

3

Package / Case :

TO-225AA, TO-126-3

Max Collector Current :

4A

Transistor Application :

AMPLIFIER

Height :

6.35mm

Max Power Dissipation :

40W

Packaging :

Bulk

Element Configuration :

Single