MJE702G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

hFE Min :

100

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Current Rating :

-4A

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100μA

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

40W

Base Part Number :

MJE702

Pbfree Code :

yes

Package / Case :

TO-225AA, TO-126-3

Transistor Type :

PNP - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

Length :

6.35mm

Surface Mount :

No

Max Power Dissipation :

40W

Max Collector Current :

4A

Collector Emitter Saturation Voltage :

2.5V

JESD-609 Code :

e3

Additional Feature :

BUILT IN BIAS RESISTOR

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Collector Emitter Breakdown Voltage :

80V

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

80V

Factory Lead Time :

2 Weeks

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Transition Frequency :

1MHz

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Voltage - Rated DC :

-80V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

6.35mm

REACH SVHC :

No SVHC

Number of Pins :

3

Published :

2006

Emitter Base Voltage (VEBO) :

5V

Height :

6.35mm

Packaging :

Bulk