MJE702G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Halogen Free :

Halogen Free

Max Collector Current :

4A

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

80V

Pbfree Code :

yes

Polarity :

PNP

Element Configuration :

Single

Height :

6.35mm

Transition Frequency :

1MHz

Factory Lead Time :

2 Weeks

Length :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2006

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

80V

Number of Terminations :

3

Radiation Hardening :

No

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Weight :

4.535924g

REACH SVHC :

No SVHC

Number of Pins :

3

JESD-609 Code :

e3

Current Rating :

-4A

Lead Free :

Lead Free

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTOR

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100μA

Voltage - Rated DC :

-80V

Package / Case :

TO-225AA, TO-126-3

Packaging :

Bulk

Collector Base Voltage (VCBO) :

80V

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Width :

6.35mm

Collector Emitter Saturation Voltage :

2.5V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

40W

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

Base Part Number :

MJE702

Power Dissipation :

40W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Transistor Type :

PNP - Darlington

hFE Min :

100