MJE700G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

4A

Current - Collector Cutoff (Max) :

100μA

Base Part Number :

MJE700

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

hFE Min :

100

Radiation Hardening :

No

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

1

Height :

11.0998mm

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

-60V

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.5V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Package / Case :

TO-225AA, TO-126-3

Element Configuration :

Single

Additional Feature :

BUILT IN BIAS RESISTOR

Collector Base Voltage (VCBO) :

60V

Pin Count :

3

Number of Pins :

3

Max Power Dissipation :

40W

Power Dissipation :

40W

Collector Emitter Breakdown Voltage :

60V

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

REACH SVHC :

No SVHC

Current Rating :

-4A

Weight :

4.535924g

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Width :

2.9972mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Transition Frequency :

1MHz

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Length :

7.7978mm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Transistor Type :

PNP - Darlington

Factory Lead Time :

2 Weeks