MJE700

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

7.7978mm

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

100μA

Height :

11.0998mm

Polarity :

PNP

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

60V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

yes

Surface Mount :

No

Package / Case :

TO-225AA, TO-126-3

Additional Feature :

BUILT IN BIAS RESISTOR

Width :

2.9972mm

Power Dissipation :

40W

Pin Count :

3

Number of Pins :

3

Mounting Type :

Through Hole

Current Rating :

-4A

Transition Frequency :

1MHz

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Base Part Number :

MJE700

Lead Free :

Lead Free

Voltage - Rated DC :

-60V

Max Power Dissipation :

40W

hFE Min :

100

Radiation Hardening :

No

JESD-609 Code :

e3

Packaging :

Bulk

Transistor Element Material :

SILICON

Transistor Type :

PNP - Darlington

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Max Collector Current :

4A

Weight :

4.535924g

Published :

2001

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

2.5V

Factory Lead Time :

2 Weeks

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

5V