MJE703

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Mfr.Part #
MJE703
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO126
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Width :
2.66mm
Pin Count :
3
Package / Case :
TO-225AA, TO-126-3
Weight :
4.535924g
Length :
7.74mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100μA
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
2 Weeks
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2006
Number of Elements :
1
Radiation Hardening :
No
Additional Feature :
BUILT IN BIAS RESISTOR
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
4A
Polarity :
PNP
Collector Base Voltage (VCBO) :
80V
Emitter Base Voltage (VEBO) :
5V
hFE Min :
100
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Halogen Free :
Halogen Free
JESD-609 Code :
e3
ECCN Code :
EAR99
Pbfree Code :
yes
Max Power Dissipation :
40W
Height :
11.04mm
Terminal Finish :
Tin (Sn)
Transistor Application :
AMPLIFIER
REACH SVHC :
No SVHC
Transition Frequency :
1MHz
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Voltage - Rated DC :
-80V
Power Dissipation :
40W
Number of Terminations :
3
Number of Pins :
3
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Packaging :
Bulk
Operating Temperature :
-55°C~150°C TJ
Current Rating :
-4A
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Transistor Type :
PNP - Darlington
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Saturation Voltage :
2.5V
Base Part Number :
MJE703
Datasheets
MJE703
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE703 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:MJE703, MJE703 pinout, MJE703 datasheet PDF, MJE703 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE703 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE703


PNP - Darlington -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

MJE703G Overview


DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.8V @ 40mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 1MHz.In extreme cases, the collector current can be as low as 4A volts.

MJE703G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz


MJE703G Applications


There are a lot of ON Semiconductor
MJE703G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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