MJE703

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Polarity :

PNP

Width :

2.66mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Height :

11.04mm

Collector Emitter Breakdown Voltage :

80V

Base Part Number :

MJE703

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Current Rating :

-4A

Transistor Type :

PNP - Darlington

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

-80V

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

1MHz

Number of Elements :

1

Mounting Type :

Through Hole

Additional Feature :

BUILT IN BIAS RESISTOR

Package / Case :

TO-225AA, TO-126-3

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Length :

7.74mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

4A

Halogen Free :

Halogen Free

Max Power Dissipation :

40W

Current - Collector Cutoff (Max) :

100μA

Pin Count :

3

Number of Terminations :

3

Published :

2006

Packaging :

Bulk

Collector Emitter Saturation Voltage :

2.5V

Factory Lead Time :

2 Weeks

Weight :

4.535924g

Element Configuration :

Single

Collector Base Voltage (VCBO) :

80V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Power Dissipation :

40W

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

80V