MJE703

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

80V

Weight :

4.535924g

Max Collector Current :

4A

Transistor Type :

PNP - Darlington

Published :

2006

Transition Frequency :

1MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Voltage (VCEO) :

80V

Number of Terminations :

3

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Number of Elements :

1

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Additional Feature :

BUILT IN BIAS RESISTOR

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

40W

Width :

2.66mm

Current Rating :

-4A

Current - Collector Cutoff (Max) :

100μA

Transistor Element Material :

SILICON

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Packaging :

Bulk

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

40W

Height :

11.04mm

Mounting Type :

Through Hole

Length :

7.74mm

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

JESD-609 Code :

e3

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Base Part Number :

MJE703

Collector Base Voltage (VCBO) :

80V

Package / Case :

TO-225AA, TO-126-3

ECCN Code :

EAR99

Pbfree Code :

yes

hFE Min :

100

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2.5V