MJD127TF
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- Mfr.Part #
- MJD127TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A DPAK
- Stock
- 44,469
- In Stock ：
- 44,469
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Published :
- 2013
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- -100V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2V
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Width :
- 6.1mm
- Current - Collector Cutoff (Max) :
- 10μA
- Length :
- 6.6mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Weight :
- 260.37mg
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 1000
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 1.75W
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 1.75W
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Base Part Number :
- MJD127
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Lead Free :
- Lead Free
- Transistor Type :
- PNP - Darlington
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -100V
- Polarity :
- PNP
- JESD-609 Code :
- e3
- Height :
- 2.3mm
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Factory Lead Time :
- 11 Weeks
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Current Rating :
- -8A
- Datasheets
- MJD127TF
MJD127TF Documents
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PNP - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD127TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 4A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 8A volts.
MJD127TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
MJD127TF Applications
There are a lot of ON Semiconductor
MJD127TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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