MJD122T4
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- Mfr.Part #
- MJD122T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 3,461
- In Stock ：
- 3,461
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- hFE Min :
- 100
- Power Dissipation :
- 20W
- Base Part Number :
- MJD122
- Time@Peak Reflow Temperature-Max (s) :
- 30
- VCEsat-Max :
- 4 V
- Current - Collector Cutoff (Max) :
- 10μA
- REACH SVHC :
- No SVHC
- Polarity :
- NPN
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 8A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 100V
- Weight :
- 1.799996g
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Width :
- 6.2mm
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Max Power Dissipation :
- 20W
- Element Configuration :
- Single
- Length :
- 6.6mm
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2V
- Max Breakdown Voltage :
- 100V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 5A
- Collector Base Voltage (VCBO) :
- 100V
- Height :
- 2.4mm
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- JESD-609 Code :
- e3
- Datasheets
- MJD122T4
MJD122T4 Documents
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NPN - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD122T4 Overview
DC current gain in this device equals 1000 @ 4A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 80mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 8A volts.
MJD122T4 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
MJD122T4 Applications
There are a lot of STMicroelectronics
MJD122T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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