MJ11032G

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Mfr.Part #
MJ11032G
Manufacturer
onsemi
Package / Case
TO-204AE
Datasheet
Download
Description
TRANS NPN DARL 120V 50A TO204
Stock
9
In Stock :
9

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Mounting Type :
Through Hole
JESD-609 Code :
e1
Voltage - Rated DC :
120V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
REACH SVHC :
No SVHC
Transistor Type :
NPN - Darlington
Contact Plating :
Copper, Silver, Tin
Number of Elements :
1
Max Collector Current :
50A
Packaging :
Tray
Published :
2002
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 25A 5V
Surface Mount :
No
Length :
38.86mm
ECCN Code :
EAR99
Polarity :
NPN
Max Power Dissipation :
300W
Pin Count :
2
Time@Peak Reflow Temperature-Max (s) :
40
Emitter Base Voltage (VEBO) :
5V
Number of Pins :
2
Pbfree Code :
yes
Element Configuration :
Single
Collector Emitter Saturation Voltage :
2.5V
Package / Case :
TO-204AE
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 500mA, 50A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
BOTTOM
Case Connection :
COLLECTOR
Power Dissipation :
300W
Current Rating :
50A
Height :
8.51mm
Factory Lead Time :
4 Weeks
Radiation Hardening :
No
Terminal Form :
PIN/PEG
Current - Collector Cutoff (Max) :
2mA
hFE Min :
1000
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Width :
26.67mm
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
120V
Collector Base Voltage (VCBO) :
120V
Continuous Collector Current :
50A
Operating Temperature :
-55°C~200°C TJ
Number of Terminations :
2
Collector Emitter Voltage (VCEO) :
120V
Datasheets
MJ11032G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ11032G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:2, Package / Case:TO-204AE, Operating Temperature:-55°C~200°C TJ, Number of Terminations:2, MJ11032G pinout, MJ11032G datasheet PDF, MJ11032G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ11032G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ11032G


NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole

MJ11032G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 25A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Continuous collector voltages of 50A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 50A volts.

MJ11032G Features


the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A


MJ11032G Applications


There are a lot of ON Semiconductor
MJ11032G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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