MJ11015
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- Mfr.Part #
- MJ11015
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 30A TO3
- Stock
- 34,105
- In Stock ：
- 34,105
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Max Collector Current :
- 30A
- Length :
- 39.37mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- PNP - Darlington
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Collector Emitter Breakdown Voltage :
- 120V
- Package / Case :
- TO-204AA, TO-3
- Published :
- 2008
- Height :
- 8.51mm
- Collector Emitter Saturation Voltage :
- 3V
- Voltage - Rated DC :
- -120V
- Current - Collector Cutoff (Max) :
- 1mA
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 2 Weeks
- Polarity :
- PNP
- Current Rating :
- -30A
- Number of Terminations :
- 2
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 1000
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Max Power Dissipation :
- 200W
- Number of Pins :
- 2
- Packaging :
- Tray
- Power Dissipation :
- 200W
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Width :
- 26.67mm
- Pin Count :
- 2
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 30A
- Lead Free :
- Lead Free
- Frequency - Transition :
- 4MHz
- Transition Frequency :
- 4MHz
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Datasheets
- MJ11015
MJ11015 Documents
PNP - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11015G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.
MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz
MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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