MJ11015
- Mfr.Part #
- MJ11015
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 30A TO3
- Stock
- 34,105
- In Stock :
- 34,105
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Package / Case :
- TO-204AA, TO-3
- Length :
- 39.37mm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 120V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Current Rating :
- -30A
- Weight :
- 4.535924g
- Width :
- 26.67mm
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- hFE Min :
- 1000
- Current - Collector Cutoff (Max) :
- 1mA
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP - Darlington
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tray
- Collector Emitter Saturation Voltage :
- 3V
- Frequency - Transition :
- 4MHz
- Max Power Dissipation :
- 200W
- Height :
- 8.51mm
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Transition Frequency :
- 4MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Power Dissipation :
- 200W
- Max Collector Current :
- 30A
- Continuous Collector Current :
- 30A
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- PIN/PEG
- Voltage - Rated DC :
- -120V
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 120V
- Pin Count :
- 2
- Number of Pins :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Collector Base Voltage (VCBO) :
- 120V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- PNP
- Datasheets
- MJ11015
MJ11015 Documents

PNP - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11015G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.
MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz
MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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