MJ11015
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- Mfr.Part #
- MJ11015
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 30A TO3
- Stock
- 34,105
- In Stock ：
- 34,105
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1mA
- Power Dissipation :
- 200W
- Transition Frequency :
- 4MHz
- Mounting Type :
- Through Hole
- Polarity :
- PNP
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- Height :
- 8.51mm
- Collector Emitter Breakdown Voltage :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~200°C TJ
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- hFE Min :
- 1000
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Voltage - Rated DC :
- -120V
- Max Collector Current :
- 30A
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP - Darlington
- Terminal Form :
- PIN/PEG
- Packaging :
- Tray
- Package / Case :
- TO-204AA, TO-3
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 200W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 3V
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Width :
- 26.67mm
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 120V
- Weight :
- 4.535924g
- Continuous Collector Current :
- 30A
- Number of Terminations :
- 2
- Number of Pins :
- 2
- Radiation Hardening :
- No
- Published :
- 2008
- Frequency - Transition :
- 4MHz
- Current Rating :
- -30A
- Datasheets
- MJ11015
PNP - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11015G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.
MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz
MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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