MJ11016G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

2

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Collector Emitter Breakdown Voltage :

120V

Package / Case :

TO-204AA, TO-3

Max Collector Current :

30A

Transistor Type :

NPN - Darlington

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1mA

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Collector Emitter Voltage (VCEO) :

120V

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Polarity :

NPN

Operating Temperature :

-55°C~200°C TJ

Length :

39.37mm

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

3V

Width :

26.67mm

Power Dissipation :

200W

Lead Free :

Lead Free

Surface Mount :

No

Terminal Position :

BOTTOM

Terminal Form :

PIN/PEG

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

200W

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Packaging :

Tray

Collector Base Voltage (VCBO) :

120V

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

4MHz

Frequency - Transition :

4MHz

Number of Terminations :

2

Pin Count :

2

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Voltage - Rated DC :

120V

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Published :

2006

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Case Connection :

COLLECTOR

Height :

8.51mm

Continuous Collector Current :

30A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Current Rating :

30A