MJ11021G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Width :

26.67mm

Packaging :

Tray

Collector Emitter Voltage (VCEO) :

250V

Voltage - Rated DC :

-250V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Height :

8.51mm

Terminal Position :

BOTTOM

Collector Base Voltage (VCBO) :

250V

Max Power Dissipation :

175W

Number of Elements :

1

Terminal Form :

PIN/PEG

Radiation Hardening :

No

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 10A 5V

Number of Pins :

2

Polarity :

PNP

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2V

Package / Case :

TO-204AA, TO-3

Current - Collector Cutoff (Max) :

1mA

Transition Frequency :

6MHz

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

250V

Operating Temperature :

-65°C~200°C TJ

Vce Saturation (Max) @ Ib, Ic :

3.4V @ 150mA, 15A

Pin Count :

2

Emitter Base Voltage (VEBO) :

50V

Max Collector Current :

15A

Element Configuration :

Single

Length :

39.37mm

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Power - Max :

175W

Pbfree Code :

yes

Current Rating :

-15A

JESD-609 Code :

e3

Power Dissipation :

150W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP - Darlington

Published :

2005

Transistor Application :

SWITCHING

Weight :

6.40101g

REACH SVHC :

No SVHC