MJ11016

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity :

NPN

ECCN Code :

EAR99

Frequency - Transition :

4MHz

Lead Free :

Lead Free

Length :

39.37mm

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Number of Terminations :

2

Surface Mount :

No

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

2 Weeks

Weight :

4.535924g

Height :

8.51mm

Collector Emitter Voltage (VCEO) :

120V

Max Power Dissipation :

200W

Terminal Form :

PIN/PEG

Number of Elements :

1

Power Dissipation :

200W

Mounting Type :

Through Hole

Package / Case :

TO-204AA, TO-3

Max Collector Current :

30A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Transistor Type :

NPN - Darlington

Radiation Hardening :

No

Number of Pins :

2

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Pin Count :

2

Continuous Collector Current :

30A

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Collector Base Voltage (VCBO) :

120V

Collector Emitter Breakdown Voltage :

120V

Voltage - Rated DC :

120V

Operating Temperature :

-55°C~200°C TJ

Current - Collector Cutoff (Max) :

1mA

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Width :

26.67mm

Current Rating :

30A

Packaging :

Tray

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Case Connection :

COLLECTOR

Transition Frequency :

4MHz

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

3V