MJ11012G
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- Mfr.Part #
- MJ11012G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 30A TO204
- Stock
- 2,302
- In Stock ：
- 2,302
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 4MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 60V
- Length :
- 39.37mm
- Published :
- 2008
- Width :
- 8.509mm
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Number of Pins :
- 2
- Height :
- 26.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 200W
- Frequency - Transition :
- 4MHz
- REACH SVHC :
- No SVHC
- Packaging :
- Tray
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Current Rating :
- 30A
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Package / Case :
- TO-204AA, TO-3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~200°C TJ
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Terminal Finish :
- Tin (Sn)
- Continuous Collector Current :
- 30A
- Max Collector Current :
- 30A
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Terminal Form :
- PIN/PEG
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 4V
- Current - Collector Cutoff (Max) :
- 1mA
- Max Power Dissipation :
- 200W
- Weight :
- 4.535924g
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 60V
- Datasheets
- MJ11012G
NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11012G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11012G Applications
There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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