MJ11012G
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- Mfr.Part #
- MJ11012G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 30A TO204
- Stock
- 2,302
- In Stock ：
- 2,302
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tray
- Transistor Application :
- AMPLIFIER
- Height :
- 26.67mm
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200W
- Polarity :
- NPN
- Transition Frequency :
- 4MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -55°C~200°C TJ
- Max Collector Current :
- 30A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 2
- Current Rating :
- 30A
- Length :
- 39.37mm
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-204AA, TO-3
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Terminal Form :
- PIN/PEG
- Power Dissipation :
- 200W
- Continuous Collector Current :
- 30A
- Number of Terminations :
- 2
- Mounting Type :
- Through Hole
- Width :
- 8.509mm
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Collector Emitter Saturation Voltage :
- 4V
- Voltage - Rated DC :
- 60V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 2
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Transistor Type :
- NPN - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Frequency - Transition :
- 4MHz
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- MJ11012G
NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11012G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11012G Applications
There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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