MJ11012G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Length :

39.37mm

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Package / Case :

TO-204AA, TO-3

Operating Temperature :

-55°C~200°C TJ

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Radiation Hardening :

No

Number of Pins :

2

Frequency - Transition :

4MHz

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Number of Terminations :

2

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

AMPLIFIER

Factory Lead Time :

2 Weeks

Continuous Collector Current :

30A

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Terminal Form :

PIN/PEG

Transition Frequency :

4MHz

Current Rating :

30A

Height :

26.67mm

Mounting Type :

Through Hole

Number of Elements :

1

Weight :

4.535924g

Published :

2008

Width :

8.509mm

Polarity :

NPN

Current - Collector Cutoff (Max) :

1mA

Pin Count :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

Power Dissipation :

200W

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

200W

Pbfree Code :

yes

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

4V

Voltage - Rated DC :

60V

RoHS Status :

ROHS3 Compliant

Max Collector Current :

30A

Transistor Type :

NPN - Darlington

Packaging :

Tray

Collector Emitter Voltage (VCEO) :

60V