MJ11012G
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- Mfr.Part #
- MJ11012G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 30A TO204
- Stock
- 2,302
- In Stock ：
- 2,302
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Polarity :
- NPN
- Number of Pins :
- 2
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Breakdown Voltage :
- 60V
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 4MHz
- Continuous Collector Current :
- 30A
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency - Transition :
- 4MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Terminal Form :
- PIN/PEG
- Length :
- 39.37mm
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Height :
- 26.67mm
- Package / Case :
- TO-204AA, TO-3
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Packaging :
- Tray
- Max Power Dissipation :
- 200W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Published :
- 2008
- Number of Terminations :
- 2
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~200°C TJ
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Max Collector Current :
- 30A
- Pbfree Code :
- yes
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Surface Mount :
- No
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 8.509mm
- Collector Emitter Saturation Voltage :
- 4V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Current Rating :
- 30A
- Transistor Type :
- NPN - Darlington
- Power Dissipation :
- 200W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Datasheets
- MJ11012G
NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11012G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11012G Applications
There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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