MJ11012

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Mfr.Part #
MJ11012
Manufacturer
Solid State Inc.
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS NPN DARL 60V 30A TO3
Stock
50
In Stock :
50

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Manufacturer :
Solid State Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
60V
Number of Terminations :
2
Polarity :
NPN
Max Power Dissipation :
200W
Factory Lead Time :
2 Weeks
ECCN Code :
EAR99
Voltage - Rated DC :
60V
Width :
8.509mm
Max Collector Current :
30A
Number of Pins :
2
Current Rating :
30A
Collector Emitter Saturation Voltage :
4V
Packaging :
Tray
Operating Temperature :
-55°C~200°C TJ
Power Dissipation :
200W
Current - Collector Cutoff (Max) :
1mA
Pbfree Code :
yes
Element Configuration :
Single
Published :
2008
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Weight :
4.535924g
Collector Emitter Voltage (VCEO) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
4MHz
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 20A 5V
Surface Mount :
No
Vce Saturation (Max) @ Ib, Ic :
4V @ 300mA, 30A
Transition Frequency :
4MHz
Transistor Application :
AMPLIFIER
Terminal Form :
PIN/PEG
Emitter Base Voltage (VEBO) :
5V
Continuous Collector Current :
30A
Length :
39.37mm
RoHS Status :
ROHS3 Compliant
Height :
26.67mm
Package / Case :
TO-204AA, TO-3
Transistor Element Material :
SILICON
Number of Elements :
1
Pin Count :
2
Collector Base Voltage (VCBO) :
60V
Terminal Finish :
Tin (Sn)
Terminal Position :
BOTTOM
JESD-609 Code :
e3
Radiation Hardening :
No
Mounting Type :
Through Hole
Lead Free :
Lead Free
Transistor Type :
NPN - Darlington
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Datasheets
MJ11012
Introducing Transistors - Bipolar (BJT) - Single Solid State Inc. MJ11012 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:2, Operating Temperature:-55°C~200°C TJ, Package / Case:TO-204AA, TO-3, Mounting Type:Through Hole, MJ11012 pinout, MJ11012 datasheet PDF, MJ11012 amp .Beyond Transistors - Bipolar (BJT) - Single Solid State Inc. MJ11012 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Solid State Inc. MJ11012


NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole

MJ11012G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.

MJ11012G Features


the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz


MJ11012G Applications


There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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