MJ11012
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- Mfr.Part #
- MJ11012
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 30A TO3
- Stock
- 50
- In Stock ：
- 50
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 39.37mm
- Number of Pins :
- 2
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Frequency - Transition :
- 4MHz
- Terminal Form :
- PIN/PEG
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Power Dissipation :
- 200W
- Height :
- 26.67mm
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 30A
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 60V
- Published :
- 2008
- Continuous Collector Current :
- 30A
- Pin Count :
- 2
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 4V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Package / Case :
- TO-204AA, TO-3
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Current Rating :
- 30A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 200W
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Width :
- 8.509mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Packaging :
- Tray
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 4MHz
- Datasheets
- MJ11012
NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11012G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11012G Applications
There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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