MJ11032
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- Mfr.Part #
- MJ11032
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 50A TO204
- Stock
- 5,167
- In Stock ：
- 5,167
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 120V
- Terminal Form :
- PIN/PEG
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Number of Pins :
- 2
- Power Dissipation :
- 300W
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 120V
- Voltage - Rated DC :
- 120V
- Package / Case :
- TO-204AE
- Transistor Application :
- AMPLIFIER
- Height :
- 8.51mm
- Max Collector Current :
- 50A
- Continuous Collector Current :
- 50A
- Collector Base Voltage (VCBO) :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Pin Count :
- 2
- Current Rating :
- 50A
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300W
- Width :
- 26.67mm
- Length :
- 38.86mm
- Operating Temperature :
- -55°C~200°C TJ
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 2mA
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Mounting Type :
- Through Hole
- Contact Plating :
- Copper, Silver, Tin
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- hFE Min :
- 1000
- Element Configuration :
- Single
- Packaging :
- Tray
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 2.5V
- Published :
- 2002
- Datasheets
- MJ11032
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11032G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 25A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Continuous collector voltages of 50A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 50A volts.
MJ11032G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11032G Applications
There are a lot of ON Semiconductor
MJ11032G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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